PECVD Si nitride and Si oxide layers - hydrogen analysis and etching after ion implantation

Ion-implantation-induced selective etching of dielectric materials is considerably diminished with increasing hydrogen content.
Making use of the ¹H(¹⁵N,αy)¹²C resonance reaction, low-temperature PECVD Si oxide and Si nitride layers were observed to
contain 12 and 23 at.% H, respectively. For different reagents etch rates were measured regarding the virgin and ion-implanted - He⁺, Ne⁺ at 60, 100 keV - PECVD films.