The Atomic Layer Deposition of HfO2 and ZrO2 using advanced metallocene precursors and H2O as an oxidant
The Atomic Layer Deposition of HfO2 and ZrO2 using advanced metallocene precursors and H2O as an oxidant
Dezelah, C. L.; Niinistö, J.; Kukli, K.; Munnik, F.; Lu, J.; Ritala, M.; Leskelä, M.; Niinistö, L.
The atomic layer deposition of HfO2 and ZrO2 thin films was investigated using (CH3C5H4)2Hf(CH3)2, (CH3C5H4)2Hf(OCH3)(CH3), (CH3C5H4)2Zr(CH3)2, and (CH3C5H4)2Zr(OCH3)(CH3) precursors at deposition temperatures between 300 and 500 °C using water vapor as the oxidant. A surface-limited growth mechanism was confirmed at 350 °C for all metal precursors examined. The processes provided nearly stoichiometric HfO2 and ZrO2 films with carbon and hydrogen concentrations below 0.5 and 1.0%, respectively, for representative samples. All films were polycrystalline as deposited and possessed a thin interfacial SiO2 layer. The capacitance-voltage and current density-voltage behavior is reported and discussed for capacitor structures containing films from this study.
Keywords: ALD; hafnium oxide; zirconium oxide; cyclopentadienyl (Cp) complexes; high-k dielectric
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Chemical Vapor Deposition 14(2008), 358-365
DOI: 10.1002/cvde.200806716
Cited 51 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-11259