The origin of the Energy-Dose window in SIMOX processing and defect engeneering

The excess of implantation-induced point defects controls the oxygen redistribution in silicon during a high-temperature treatment such as in SIMOX (Separation-by-IMplanted-Oxygen). The Energy-Dose window for the formation of a perfect homogeneous and planar buried oxide layer is caused by excess point defects. Quantitative relations are given between the distribution of the initially generated excess defects and the finally formed oxide layer. Different methods of defect engineering by vacancy introduction via He implantation are discussed.