Real-time evolution of electrical properties and structure of indium oxide and indium tin oxide during crystallization

Indium oxide and tin-doped indium oxide amorphous films grown by pulsed reactive magnetron sputtering were annealed in vacuum. The film structure and properties were studied using in-situ X-ray diffraction, spectroscopic ellipsometry, elastic recoil detection analysis and four point probe measurements. The electrical properties of the indium oxide film change mainly before the crystallization outset. In contrast, the crystallization of tin-doped indium oxide caused a resistivity decrease due to Sn donor activation with an estimated efficiency of 40%.