Magnetic order by C-ion implantation into Mn5Si3 and Mn5Ge3 and its laterial modification
Magnetic order by C-ion implantation into Mn5Si3 and Mn5Ge3 and its laterial modification
Suergers, C.; Joshi, N.; Potzger, K.; Strache, T.; Moeller, W.; Fischer, G.; von Loehneysen, H.
Ferromagnetic Mn5Si3C0.8 and Mn5Ge3C0.8 films with Curie temperatures TC well above room temperature are obtained by 12C+-ion implantation in antiferromagnetic Mn5Si3 or ferromagnetic Mn5Ge3. Patterning of the films with a gold mesh serving as a stencil mask during implantation allows a lateral modification of magnetic order creating ferromagnetic regions of high-TC Mn5Ge3C0.8 which are embedded in low-TC Mn5Ge3. This provides a procedure for the fabrication of magnetoelectronic hybrid-devices comprised of different magnetic phases.
Keywords: magnetic semiconductors; ion implantation; silicides
- Applied Physics Letters 93(2008), 062503
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