RTA and FLA of ultra-shallow implanted layers in Ge
RTA and FLA of ultra-shallow implanted layers in Ge
Wündisch, C.; Posselt, M.; Anwand, W.; Schmidt, B.; Mücklich, A.; Skorupa, W.; Clarysse, T.; Simoen, E.
The formation of ultra-shallow n+ layers by P or As implantation and subsequent rapid thermal annealing (RTA) or flash-lamp annealing (FLA) is investigated. The focus is on diffusion and activation of dopants. RTA leads to considerable broadening of the shallow as-implanted profiles by concentration-dependent diffusion. In contrast, FLA does not cause any diffusion and is therefore a promising method for producing ultra-shallow n+p junctions in Ge. Under present annealing conditions RTA yields maximum activation levels of about 1.1E19 and 6.5E18 for P and As, respectively. The maximum activation achieved by FLA is about 4.0E19 and 2.1E19 for P and As, respectively. Possible mechanisms for diffusion and deactivation of dopants are discussed.
Keywords: Germanium; ion implantation; annealing; electrical doping; diffusion; activation
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Contribution to proceedings
16th IEEE International Conference on Advanced Thermal Processing of Semiconductors (IEEE RTP 2008), 30.09.-03.10.2008, Las Vegas, NV, USA
Proceedings of the 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008, September 30- October 3, 2008, Las Vegas, NV, USA, Piscataway, NJ: IEEE, 978-1-4244-1950-0, 245-249 -
Lecture (Conference)
16th IEEE International Conference on Advanced Thermal Processing of Semiconductors (IEEE RTP 2008), 30.09.-03.10.2008, Las Vegas, NV, USA
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