Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure

The formation of heterostructures-on-insulator is a way to increase the carrier mobility in the nanometer-scale layers. The electron mobility in InSb is about 50 times higher than that in bulk silicon. The formation of Si/InSb on insulator heterostructures may provide an increase of effective electron mobility in the nanometer scale SOI films. In this work, we present the results on the interface mediated endotaxial growth of InSb nanocrystalline phase at the Si/SiO2 bonding interface of silicon-on-insulator (SOI) structure.