Computer Simulation of Channeling Profile Analysis of Implantation Damage

Channeling profile analysis is simulated using the dynamic binary collision code Crystal-TRIM. A good agreement between theoretical and experimental data is found for silicon targets which were predamaged by Si+ ions of different energies and analyzed by 140 keV B+ ions. For each example the depth profile of the defects relevant for the dechanneling of the analyzing ions is given. An estimation on the annealing of such defects is obtained by comparison of results for as-implanted and annealed samples.