Investigation of Dwell-Time Effects on the Cobalt Disilicide Formation Using Focused Ion Beam Implantation

The influence of dwell-time effects on the formation of CoSi2 layers was investigated. The layers were produced on Si(111) and Si(100) by ion beam synthesis using a focused ion beam system. The experiments show that the dwell-time has a strong influence on the formation process of the cobalt disilicide films. In order to obtain high quality films suitable for applications short dwell-time (about 1µs) are necessary.