Dose Rate Effects in Focused Ion-Beam Synthesis of Cobalt Disilicide

The influence of the dwell-time in focused ion beam synthesis has been investigated. Cobalt disilicide layers have been produced by 70 keV Co²⁺ implantation into silicon and have been investigated by Rutherford backscattering spectroscopy and scanning electron microscopy. At an implantation temperature of about 400 °C, it is only possible to form continuous CoSi₂ layers using sufficiently short pixel dwell-times. This result is explained by an enhanced damage accumulation for longer dwell-times.