Anisotropic scaling of ripple morphologies on high-fluence sputtered silicon
Anisotropic scaling of ripple morphologies on high-fluence sputtered silicon
Keller, A.; Cuerno, R.; Facsko, S.; Möller, W.
The evolution of Si(100) surfaces has been studied during oblique high-fluence ion sputtering by means of atomic force microscopy. The observed surface morphology is dominated by nanoscale ripples and kinetic roughening at small and large lateral scales, respectively. The large-scale morphology exhibits anisotropic scaling at high fluences with different roughness exponents an = 0.76 ± 0.04 and ap = 0.41 ± 0.04 in the directions normal and parallel to the incident ion beam, respectively. Comparison with the predictions of single field and two-field ("hydrodynamic") models of ion erosion suggests the relevance of nonlinearities that are not considered in the simpler anisotropic Kuramoto-Sivashinsky equation.
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Physical Review B 79(2009)11, 115437
DOI: 10.1103/PhysRevB.79.115437
Cited 45 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-12142