Si+ implantation induced photoluminescence enhancement in PMMA
Si+ implantation induced photoluminescence enhancement in PMMA
Tsvetkova, T.; Balabanov, S.; Avramov, L.; Borisova, E.; Bischoff, L.
Si+ ion implantation effects on the photoluminescence (PL) properties of polymethyl-methacrylate (PMMA) have been studied. Low-energy ion implantation (E=30÷50 keV) was carried out over a range of different ion doses (D=1013÷1017 cm-2). The observed effect of PL enhancement (PLE) is essentially dependent on the ion dose. For certain doses, the overall amplitude of the PL emission has a several times (~ 5 times) increase. Electron microscopy results and surface elemental analysis reveal implanted Si atoms clustering which could be related to the observed PLE effects.
Keywords: ion implanted polymers; polymethyl-methacrylate; photoluminescence
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Przeglad elektrotechniczny 84(2008)3, 72-74
ISSN: 0033-2097
Permalink: https://www.hzdr.de/publications/Publ-12162