Novel LEFET with two self-aligned Si nanocrystal layers

A light emitting feld-effect transistor (LEFET) which is based on self-aligned silicon nanocrystal delta-layers in the gate oxide of a nMOSFET device with an active gate area of 20x20 µm2 is demonstrated. Two layers of Si NCs were prepared in the gate oxide close to both Si/SiO2 interfaces by ion irradiation through the 50 nm poly-Si/15 nm SiO2/(001)Si substrate LEFET stack and subsequent annealing. An AC voltage was applied to the gate in order to inject charges of both polarities in the Si NCs. AC voltage and frequency dependent electroluminescence spectra were recorded as a function of the annealing conditions.