Diffusion suppression etc. during electrical activation in implanted Ge and Si-SOI
Diffusion suppression etc. during electrical activation in implanted Ge and Si-SOI
Skorupa, W.
Recent results on diffusion suppression, electrical activation and related problems in implanted Ge and Si-SOI were reported. A prospect regarding millisecond thermal processing of high k dielectrics was given.
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Invited lecture (Conferences)
24. Nutzertreffen Kurzzeittemperung, 23.10.2008, Dortmund, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-12202
