Defect Production and Evolution During and After Ion Implantation Studied by a Combination of Time-Ordered BCA and MD Simulations

A novel method is applied to investigate the as-implanted defect structure formed during keV implantation into Si. It uses a combination of time-ordered computer simulations based on the binary collision approximation (BCA) and classical molecular dynamics (MD) simulations.The as-implanted damage created in 30 keV P+, 15 keV As+, and 15 keV B+ implants is analyzed and depth profiles of different defect species are given.