Deep Level Traps in the Extended Tail Region of Boron-Implanted n-Type 6H-SiC

Deep traps in the boron extended tail region of ion implanted 6HSiC pn junctions formed during annealing have been studied
using deep level transient spectroscopy. Dramatically high concentrations of ~ 1016 cm3 of the D center have been observed
through the unusual appearance of minority peaks in the majority carrier spectra. No evidence is found for any shallow boron
acceptor in this region, but an induced hole trap Ih at EV + 0.46 eV is found under cold implantation conditions. These results
support the picture of the extended tail, rich in boron-vacancy complexes such as the D center, which forms as a result of vacancy
enhanced indiffusion. The dominance of the electrically active D center in the depletion layer of the technologically important SiC
pn junction diode suggests the need for further research in this area. © 1998 American Institute of Physics.