Electroluminescence (at 316 nm) and electrical stability of a MOS light-emitting device operated at different temperatures

The influence of the operating temperature on the electrical and optical stability of the Metal-Oxide-Silicon-based light-emitting device (MOSLED) with Gd and Gd plus K implanted SiO2 layers was investigated. An increase of the temperature from room temperature up to 423 K reduces the gate voltage by about 8 V due to the Auger de-excitation mainly. It increases the rate of the EL quenching process and the degradation of the MOSLED structure by a factor of three. On the other hand, the MOSLED structure containing Gd and K atoms shows that an increase of the operating temperature leads to a threefold decrease of the decay time what was not observed in the gadolinium-implanted sample. The decrease of the operating temperature down to 70 K leads to an increase of the EL intensity and the operating time in both cases.