Lattice Location Determination of Ge in SiC by ALCHEMI
Lattice Location Determination of Ge in SiC by ALCHEMI
Kups, T.; Voelskow, M.; Skorupa, W.; Soueidan, M.; Ferro, G.; Pezoldt, J.
The incorporation of Ge into cubic and hexagonal silicon carbide is compared for three different doping methods: ion-implantation; molecular beam epitaxy and liquid phase epitaxy.
Keywords: MBE; ALCHEMI; Ge; doping methods
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Contribution to external collection
A.G. Cullis; P.A. Midgley: Microscopy of semiconductor materials, Netherlands: Springer Netherlands, 2008, 978-1-4020-8615-1, 353-358
Permalink: https://www.hzdr.de/publications/Publ-12563
