Conductivity through an organic field-effect transistor with ferroelectric gating

The electronic transport of electrons and holes through stacks of functionalized quaterthiophene molecules as part of a novel organic ferroic field-effect transistor is investigated. The novel application of a ferroelectric instead of a dielectric substrate provides a bit-wise switching of the ferroelectric domains and enables the opportunity of employing the polarization field of these domains as a gate field in an organic semiconducting device. An already established phenomenological model called multilayer organic light-emitting diodes (MOLED) [1] is extended to transverse fields and numerical results are discussed. Model-specific parameters are determined with the help of experimental and theoretical methods.

[1] Houili et al., Comp. Phys. Comm. 156, 103-122 (2003)