The morphology of amorphous SiO2 surfaces during low energy ion sputtering


The morphology of amorphous SiO2 surfaces during low energy ion sputtering

Keller, A.; Facsko, S.; Möller, W.

The morphology of different amorphous or amorphized SiO2 surfaces, including thermally grown films, fused silica, and single crystalline quartz, during low energy ion sputtering has been investigated by means of atomic force microscopy. For all three materials, the formation of periodic ripple patterns oriented normal to the direction of the ion beam is observed at intermediate incident angles. At near-normal incidence, the SiO2 surfaces remain flat, whereas a rotation of the ripple patterns is observed at grazing incidence. At intermediate angles, the patterns on the different surfaces exhibit wavelength coarsening of different strengths, which can be attributed to different amounts of near-surface mass transport by the surface-confined ion-enhanced viscous flow. In the framework of the recent hydrodynamic model of ion erosion, the observed differences in ripple coarsening are consistent with this interpretation and indicate that the surface energies of thermally grown SiO2 and amorphized quartz are lower and higher than that of fused silica, respectively.

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