Formirovanie zentrov photolumineszensii pri otschige sloev SiO2 implantirovannich ionami Ge
Formirovanie zentrov photolumineszensii pri otschige sloev SiO2 implantirovannich ionami Ge
Kachurin, G. A.; Rebohle, L.; Tyschenko, I. E.; Volodin, V. A.; Voelskow, M.; Skorupa, W.; Fröb, H.
Metodami photolumineszensii, kombinirovannove rassejania i spektroskopii obratnogo rasseania alpha tschastiz issledovano formirovanie zentrov rekombinationnogo uslutschenia pri otschige sloev SiO2, implantirovannich ionami Ge.
Keywords: photoluminescence; ge ion implantation; SiO2; annealing
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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