Ion implantation enhanced formation of 3C-SiC grains at the SiO2/Si interface after annealing in CO gas

Ion implantation enhanced formation of 3C-SiC grains at the SiO2/Si interface after annealing in CO gas

Pécz, B.; Stoemenos, J.; Voelskow, M.; Skorupa, W.; Dobos, L.; Pongrácz, A.; Battistig, G.

Silicon carbide with its hexagonal and cubic polytypes is one of the wide band-gap semiconductors used for high temperature applications. Obviously the growth of cubic SiC on Si would be very advantageous, because very large, high quality substrates would then be available at relatively low cost.

Keywords: 3C-SiC formation of carbide; ion implantation; annealing in CO

  • Contribution to proceedings
    16th International Conference on Microscopy of Semiconducting Materials, 17.03.2009, Oxford, United Kingdom
    Ion implantation enhanced formation of 3C-SiC grains at the SiO2/Si interface after annealing in CO gas
  • Open Access Logo Journal of Physics: Conference Series 209(2010), 012045-1-012045-2
    DOI: 10.1088/1742-6596/209/1/012045
    Cited 1 times in Scopus

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