Characterization of vacancy-type defects in Al⁺ and N⁺ ion implanted SiC by slow positron implantation spectroscopy

Characterization of vacancy-type defects in Al⁺ and N⁺ ion implanted SiC by slow positron implantation spectroscopy

Anwand, W.; Brauer, G.; Yankov, R. A.; Skorupa, W.; Coleman, P.

• Applied Surface Science 149 (1999) 140-143

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