Characterization of Defects in Ion Implanted SiC by Slow Positron Implantation Spectroscopy and Rutherford Backscattering


Characterization of Defects in Ion Implanted SiC by Slow Positron Implantation Spectroscopy and Rutherford Backscattering

Anwand, W.; Brauer, G.; Coleman, P. G.; Voelskow, M.; Skorupa, W.

  • Applied Surface Science 149 (1999) 148-150
    DOI: 10.1016/S0169-4332(99)00191-9
    Cited 3 times in Scopus
  • Lecture (Conference)
    8th Int. Workshop on Slow Positron Beam Techniques for Solids and Surfaces (SLOPOS-8), Cape Town, Sept. 6 - 12, 1998
  • Lecture (Conference)
    30th Polish Seminar on Positron Annihilation, Jarnoltowek, Sept. 17-21, 1998

Permalink: https://www.hzdr.de/publications/Publ-1291