Electronic transport properties through thiophenes on switchable domains

The electronic transport of electrons and holes through stacks of dicyano-dibutyl- quaterthiophene (DCNDBQT) as part of a novel organic ferroic field-effect transistor (OFFET) is investigated. The novel application of a ferroelectric instead of a dielectric substrate provides the possibility to switch bit-wise the ferroelectric domains and to employ the polarization of these domains as a gate field in an organic semiconductor. A device containing very thin DCNDBQT films of around 20 nm thickness is intended to be suitable for logical as well as optical applications. We investigate the device properties with the help of a phenomenological model called multilayer organic light-emitting diodes (MOLED), which was extended to transverse fields. The results showed, that space charge and image charge effects play a crucial role in these organic devices.