Atomic Layer Deposition Growth of BaB2O4 Thin Films from an Exceptionally Thermally Stable Tris(pyrazolyl)borate-Based Precursor
Atomic Layer Deposition Growth of BaB2O4 Thin Films from an Exceptionally Thermally Stable Tris(pyrazolyl)borate-Based Precursor
Saly, M. J.; Munnik, F.; Baird, R. J.; Winter, C. H.
The atomic layer deposition growth of BaB2O4 thin films was investigated using Ba(TpEt2)2 and water as precursors between 240 and 400 °C. The process provided uniform films and exhibited a large ALD window between 250 and 375 °C, in which a constant growth rate of 0.23 Å/cycle was observed.
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Chemistry of Materials 21(2009), 3742-3744
DOI: 10.1021/cm902030d
Cited 18 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-12994
