Monte Carlo simulations of ion channeling in crystals containing extended defects
Monte Carlo simulations of ion channeling in crystals containing extended defects
Turos, A.; Nowicki, L.; Stonert, A.; Pagowska, K.; Jagielski, J.; Muecklich, A.
Monte Carlo simulations code of ion channeling in crystals containing extended defects has been developed. Bent channel model of lattice distortions produced by dislocations have been used for defect analysis in ion implanted GaN. To test the code energy dependence of dechanneling parameter has been calculated for crystals containing randomly displaced atoms and bent channels. It follows the 1/E and E1/2 dependence, respectively.
Keywords: Rutherford backscattering; ion channeling; Monte Carlo simulations; GaN epitaxial layers; ion bombardment; extended defects
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Lecture (Conference)
19th International Conference on Ion Beam Analysis, 07.-11.09.2009, Cambridge, United Kingdom -
Nuclear Instruments and Methods in Physics Research B 268(2010)11-12, 1718-1722
DOI: 10.1016/j.nimb.2010.02.046
Cited 31 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-13309
