Quantitative Electrical Nanometrology - Kelvin Probe Force Microscopy Measurements on Semiconductors

In this paper state of the art electrical nanometrology techniques are reviewed with the focus on semiconducting materials. The basics of scanning capacitance microscopy, scanning spreading resistance microscopy, scanning microwave microscopy, and Kelvin probe force microscopy, and their applicability on various material systems are discussed. Quantitative Kelvin probe force microscopy measurements on semiconductors, namely on a conventional dynamic random-access memory cell and on a cross-sectionally prepared Si epilayer structure, are presented.