Rare earth implanted MOS light emitting devices

Rare earth implanted MOS light emitting devices are one of the most promising candidates for Si-based light emission and provide – depending on the implanted element – strong electroluminescence from the UV through the visible up to the IR. The talk will start with an introduction to rare earth’s and the special features of their electronic structure, and will focus than on the electroluminescence properties and the possibilities to enhance efficiency and operation life time of such devices. Finally the suitability for potential applications, especially in biosensing, will be discussed.