Ion implantation in AFM cantilever array fabrication

This paper describes the fabrication of p-type silicon piezoresistive sensing and actuating resistive heater elements monolithically integrated in AFM cantilever arrays using ion implantation for boron doping of all elements including corresponding interconnecting lines between them. Because it has been found that for p-type piezoresistivity the predicted values of the piezoresistive coefficients are approximately two times higher in ultra-shallow boron doped layers with a pn-junction depth < 10 nm than in the silicon p-type bulk material special efforts were done for the realization of ultra-shallow boron profiles using low-energy ion implantation and point defect engineering.