EFTEM, EELS, and Cathodoluminescence in Si-implanted SiO2 Layers
EFTEM, EELS, and Cathodoluminescence in Si-implanted SiO2 Layers
Fitting, H.-J.; Fitting Kourkoutis, L.; Salh, R.; Schmidt, B.
Scanning transmission electron microscopy (STEM) in combination with electron energy loss spectroscopy (EELS) and cathodoluminescence (CL) have been used to investigate Si+-implanted amorphous silicon dioxide layers and the formation of Si nanoclusters.
Keywords: Ion implantation; Si nanoclusters
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Microscopy and Microanalysis 15(2009)Suppl. 2, 1104-1105
DOI: 10.1017/S1431927609092174
Cited 1 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-13570
