Electrical Characterisation of USJs in doped Si

An adaption of the DHE technique, using a stepwise oxidation, as an alternative to e.g. SRP methods as a tool to determine active carrier concentration and mobility depth profiles is presented. As known from the literature, a reduction of dopand activation as well as a decrease of mobility with increasing implantation dose above the solubility limit is observed. The aim is to combine the effects known from the literature in a model system. For industrial purpose, this enables one to find a “sweet spot” of high mobility and active dopand concentration while minimizing the negative effects of a high implantation dose.