Isotopic Comparative Method (ICM) for the determination of variations of the useful ion yields in boron doped silicon as a function of oxygen concentration in the 0 - 10 at% range
Isotopic Comparative Method (ICM) for the determination of variations of the useful ion yields in boron doped silicon as a function of oxygen concentration in the 0 - 10 at% range
Dupuy, J. C.; Dubois, C.; Prudon, G.; Gautier, B.; Kögler, R.; Akhmadaliev, S.; Perrat-Mabilon, A.; Peaucelle, C.
Specific samples containing O-18 and O-16 are used to measure the variations of the relative ion yields of boron, oxygen and silicon as a function of oxygen concentration. O-18 and O-16 are used to implement an Isotopic Comparative Method (ICM) which allows to correct the matrix effects involved by the presence of a high concentration of oxygen in the sample: the near-flat profile of O-18, measured in the 'dilute', linear regime (weak concentration) is used to calculate the real concentration of O-16. The ion yields of B+, O+, Si+, O- and Si- are measured as a function of the oxygen concentration. For B+ ion yield, the variation is important whereas they are weak for Si-+/- and O-+/- ion yields for the range [0-12 at.%]. This ICM applied to oxygen in silicon can be considered as an interesting complementary method of previous 'O-16 implantation method' and of 'O-18 single marker method'.
Keywords: Secondary ion mass spectrometry; SIMS; Isotopic comparative method; ICM; Oxygen; Silicon; Boron
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 13605) publication
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Lecture (Conference)
SIMS XVII Toronto, Canada, 13.-17.09.2009, Toronto, Canada -
Surface and Interface Analysis 43(2010)1-2, 137-140
DOI: 10.1002/sia.3657
Cited 3 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-13605