Deep-level defects study of arsenic-implanted ZnO single crystal

Unintentionally doped n-type zinc oxide (ZnC) single crystal was implanted by arsenic ions with fluence of 10¹⁴cm^-2 at room temperature followed by post-implantation annealing up to 900 degrees C. Rectifying property was not observed in the As-implanted or the post-implantation annealed samples. Au Schottky contact was fabricated on the samples with the H2O2 pre-treatment. Deep-level transient spectroscopy measurements were performed on the Schottky contacts to study the deep-level defects and their thermal evolution. (C) 2008 Elsevier Ltd. All rights reserved.