Nanostructuring of semiconductors with ion beams

Surely in closed relation to the invention of the first bipolar transistor, W. Shockley filed also the first patent regarding the doping of semiconductors by ion implantation. Since that time ion beam engineering has been taken a tremendous development getting the dominant doping method of choice in chip technology. Automatically, ion beam engineering took also the move to nanotechnology with the Moore-law based miniaturisation of electronic devices.
In this lecture I will present after a short introduction into the basics of ion-solid interaction with a step-by-step philosophy the move to nanotechnology starting (1) with thinning of functional layers, then (2) moving to the world of nanowires and nanoclusters to reach finally (3) the treatment of materials with single ions. The latter item points already to dimensions of the subnano regime, to atom engineering (or, if you like, picotechnology)!
As well known, ion beam engineering is always closely connected to annealing treatments to remove the radiation-induced damage effects from the ion-treated material. With the transition to nanodimensions there developed, at least in silicon chiptechnology after the year of 2000, a need for shorter and shorter annealing times to keep the needed nanodimensions during the processing of the chips. In this context flash lamp annealing in the millisecond range will be included into the discussion of some of the topics.
The Rossendorf research center with one of the worldwide largest ion beam centers in its walls has developed a large variety of activities in the course of the last years to move its expertise in ion beam processing and short time annealing into the world of nanotechnology. Examples for the different above-mentioned approaches mostly based on Rossendorf activities, that will be touched in the lecture, are:

(1) Superconducting germanium, Doping in SOI-chips, Superthin insulator in SOI
(2) Silicon nanowires, surface patterning for ripples, nanoclusters for silicon-based light emission, diluted magnetic semiconductors (DMS)
(3) Highly charged ions etc.: Can they flatten the path to a quantum computer…?