Ion-beam synthesis of InSb nanocrystals within the buried SiO2 layer of silicon-on-insulator structure
Ion-beam synthesis of InSb nanocrystals within the buried SiO2 layer of silicon-on-insulator structure
Tyschenko, I. E.; Cherkov, A. G.; Voelskow, M.; Popov, V. P.
A strong decrease of the carrier mobility of the nanometer thick silicon films imposes limitation on the application of SOI structures in the current silicon planar CMOS technology. The formation of heterostructures-on-insulator is a way to increase carrier mobility in the nanometer scale layers.
Keywords: SOI; InSb
-
Poster
IIT 2010, 01.-07.06.2010, Kyoto, Japan
Permalink: https://www.hzdr.de/publications/Publ-13967