Microcavity enhanced silicon light emitting pn-diode

An electrically driven silicon light emitting diode with two distributed Bragg reflectors is reported. The active material is a Si pn-junction fabricated by boron ion implantation into an n-type silicon-on-insulator wafer. The cavity with a thickness of a few wavelengths is formed by amorphous Si/SiO2 multilayer stacks. A strong narrowing and enhancement of the electroluminescence at a resonant wavelength of lambda=1146 nm is observed with a quality factor of Q=143 and a finesse of F=11.