The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge

In the present work, we have prepared Mn-doped Ge using different annealing approaches after Mn ion implantation, and obtained samples with hole concentrations ranging from 10¹⁸ to 2.1$\times$10²⁰ cm^-3, the latter being the highest reported so far. Based on the magneto-transport properties of Mn doped Ge, we argue that the hole concentration is a decisive parameter in establishing carrier-mediated ferromagnetism in magnetic Ge.