Photoluminescence of Si+ and C+ implanted polymers


Photoluminescence of Si+ and C+ implanted polymers

Tsvetkova, T.; Balabanov, S.; Avramov, L.; Borisova, E.; Angelov, I.; Bischoff, L.

Visible photo luminescence (PL) of ion implanted polymers was studied. Different polymer materials were used for the purpose: polypropylene (PP), poly-tetrafluor-ethylene (Teflon), ultra-high-molecular-weight-polyethylene (UHMWPE) and UHMWPE+Bi. Ion implantation with Si+ and C+ was performed at energies of 30 keV with doses in the range 1013 – 1017 cm−2. The results show that a PL enhancement (PLE) effect may occur for some polymer materials if proper implantation energy and doses are employed, the effect in the case of some polymer materials implanted with Si+ and C+ being considerable. While the effect is observed for all doses of C+ implanted in UHMWPE, PLE is only observed for the lowest dose of Si+ (D=1×1015 cm−2) implanted in Teflon, the further dose increase resulting in PL quenching only, presumably due to processes of structural degradation The appearance of ultra-violet (UV) range PL in the case of Si+ implanted UHMWPE could be originating from the formation of Si-related new defect sites, but more data are needed to explore this effect further into the deeper UV range (λ<350 nm).

Keywords: photo luminescence; polymers; implantation

  • Lecture (Conference)
    16th Int. Summer School on Vacuum, Electron and ion Technologies VEIT2009, 28.09.-02.10.2009, Sunny Beach, Bulgaria
  • Open Access Logo Journal of Physics: Conference Series 223(2010), 012033_1-012033_5
    DOI: 10.1088/1742-6596/223/1/012033
    Cited 3 times in Scopus

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