Surface Modification on KBr (001) with Slow Highly Charged Ions
Surface Modification on KBr (001) with Slow Highly Charged Ions
Wilhelm, R. A.; Heller, R.; El-Said, A. S.; Facsko, S.
Highly Charged Ions (HCI) carry an enormous amount of potential energy (up to 100 keV for Xe50+) which is defined as the sum of the binding energies of all missing electrons. This unique parameter offers new ways of surface modifications without a significant bulk damage.
During neutralization and de-excitation processes of the HCI the potential energy is released into electronic excitations within the solid (creation of electron hole pairs). These electron hole pairs get rapidly self-trapped due to strong electron-phonon coupling in the ionic lattice and decay into color centers (mainly H, F and F*-centers).
Finally these color centers lead to a desorption of K and Br neutralized atoms at the surface site, which after a agglomeration of many of these color centers forms a pit-like nanostructure on atomically flat KBr(001) surfaces.
The influence of kinetic and potential energy effects will be discussed.
Keywords: HCI; DIET; KBr; electron-hole pair; pit; nanostructures; color center
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 14850) publication
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Lecture (Conference)
International Symposium on Electron Beam Ion Sources and Traps, EBIST2010, 07.-10.04.2010, Stockholm, Sverige -
Poster
International Symposium on Electron Beam Ion Sources and Traps, EBIST2010, 07.-10.04.2010, Stockholm, Sverige
Permalink: https://www.hzdr.de/publications/Publ-14850