Formation of void lattice after annealing of Ge quantum dot lattice in alumina matrix
Formation of void lattice after annealing of Ge quantum dot lattice in alumina matrix
Pinto, S. R. C.; Rolo, A. G.; Gomes, M. J. M.; Ivanda, M.; Bogdanović-Radović, I.; Grenzer, J.; Mücklich, A.; Barber, D. J.; Bernstorff, S.; Buljan, M.
We report on the formation of a regularly ordered void lattice with a void size of about 4 nm in an alumina matrix. The voids were formed by thermal treatment of a well-ordered three-dimensional Ge quantum dot lattice formed earlier by self-assembled growth in an alumina matrix during magnetron sputtering codeposition of Ge+Al2O3. During the subsequent annealing the germanium atoms were lost from the film and so voids were produced. The positions of the voids are ordered in the same way as the Ge quantum dots that were present before annealing, while their sizes can be controlled by the deposition parameters.
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 15036) publication
-
Applied Physics Letters 97(2010), 173113
DOI: 10.1063/1.3499426
Cited 13 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-15036