Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate
Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate
Buljan, M.; Grenzer, J.; Holý, V.; Radić, N.; Mišić-Radić, T.; Levichev, S.; Bernstorff, S.; Pivac, B.; Capan, I.
We report on structural properties and charge trapping in [(Ge+SiO2)/SiO2]×2 films deposited by magnetron sputtering on a periodically corrugated-rippled substrate and annealed in vacuum and forming gas. The rippled substrate caused a self-ordered growth of Ge quantum dots, while annealing in different environments enabled us to separate charge trapping in quantum dots from the trapping at the dot-matrix and matrix-substrate interfaces. We show that the charge trapping occurs mainly in Ge quantum dots in the films annealed in the forming gas, while Si–SiO2 interface trapping is dominant for the vacuum annealed films.
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 15037) publication
-
Applied Physics Letters 97(2010), 163117
DOI: 10.1063/1.3504249
Cited 23 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-15037