Raman investigation of lattice defects in the CoSi₂ synthesis using focused ion beam implantation

CoSi2 layers were produced by 70 keV Co focused ion implantation into (111)Si. Within a comparative study the CoSi2 layer quality and implantation damage were investigated as a function of pixel dwell-time and substrate temperature. Irradiation damage measurements were done by micro-Raman analysis. The results suggest that the dwell-time dependence of the CoSi2 layer formation - continuous layers for short and disrupted for long dwell-time - is caused by an adequate change from crystalline to amorphous silicon.