Microstructure analysis at the interface of Er decorated Ge nanocrystals in SiO2
Microstructure analysis at the interface of Er decorated Ge nanocrystals in SiO2
Kanjilal, A.; Gemming, S.; Rebohle, L.; Muecklich, A.; Gemming, T.; Voelskow, M.; Skorupa, W.; Helm, M.
Using scanning transmission electron microscopy and aberration-corrected high-resolution transmission electron microscopy the existence of Er around Ge nanocrystals (NCs) is established. In fact, Ge NCs with Er-rich graded interfaces are proposed experimentally and validated by theoretical modeling using a supercell structure that consists of compounds determined by x-ray diffraction. The local electronic structure of the proposed interface geometry is found to be in accordance with the hypothesis behind the inverse energy transfer process from the Er3+ to Ge related oxygen-deficiency centers.
Keywords: nanocluster; silicon dioxide; luminescence; erbium; TEM; DFT; germanium; core-shell
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
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- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 15402) publication
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Physical Review B 83(2011), 113302
DOI: 10.1103/PhysRevB.83.113302
Cited 3 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-15402