Superconducting nanolayers in Ge and Si fabricated by Ga+ ion implantation and rapid thermal annealing
Superconducting nanolayers in Ge and Si fabricated by Ga+ ion implantation and rapid thermal annealing
Heera, V.; Fiedler, J.; Skrotzki, R.; Herrmannsdörfer, T.; Voelskow, M.; Mücklich, A.; Schmidt, B.; Skorupa, W.
Superconducting nanolayers in Ge and Si can be fabricated by high fluence Ga ion implantation and subsequent rapid thermal annealing.
Keywords: superconducting Ge; superconducting Si; Ga ion implantation; rapid thermal annealing
Involved research facilities
- High Magnetic Field Laboratory (HLD)
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 15586) publication
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Lecture (others)
29. Treffen der Nutzergruppe Heißprozesse und RTP, 12.05.2011, Erlangen, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-15586
