Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy
Cyclotron resonance mass and Fermi energy pinning in the In(AsN) alloy
Drachenko, O.; Patanè, A.; Kozlova, N. V.; Zhuang, Q. D.; Krier, A.; Eaves, L.; Helm, M.
We report cyclotron resonance (CR) experiments on the midinfrared alloy InAs1-xNx grown on GaAs with x from 0% to 1.9%. Using magnetic fields up to 60 T and terahertz photon sources from 3 to 30 THz, we determine the dependence on x of the electron density and CR mass. The increase in the carrier density with increasing x is accompanied by a redshift in the interband photoluminescence emission and is explained in terms of the pinning of the Fermi level to its value at x = 0. The high carrier densities (similar to 10(18) cm(-3)) at x similar to 1% give rise to a CR mass that is only weakly dependent on the excitation energy, significantly weaker than that in InAs. (C) 2011 American Institute of Physics.
Keywords: Nitrogen; Cyclotron resonance; effective mass
Involved research facilities
- High Magnetic Field Laboratory (HLD)
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Applied Physics Letters 98(2011)16, 162109-1-162109-3
DOI: 10.1063/1.3583378
Cited 12 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-15628