Nanoanalysis of lanthanum scandate MOS capacitors addressing reliability after local current flow

Hippler, Markus; Streit, Stephan; Lehmann, Jan; Skorupa, Wolfgang; Schmidt, Heidemarie; Helm, Manfred; Lopes, J. M. J.; Schubert, Jürgen; Huber, Hans-Peter; Kienberger, Ferry; Mantl, Siegfried

Nanoanalysis of lanthanum scandate MOS capacitors addressing reliability after local current flow

Hippler, M.; Streit, S.; Lehmann, J.; Skorupa, W.; Schmidt, H.; Helm, M.; Lopes, J. M. J.; Schubert, J.; Huber, H.-P.; Kienberger, F.; Mantl, S.

The capacitance of series LaScO₃-SiO₂ capacitors on Si substrates has been investigated in the same DC bias range and at the same operation frequencies by admittance and scanning microwave microscopy (SMM) measurements on the 10^(-3) cm² scale and 100 nm² scale, respectively. By SMM measurements it is shown that changes in the series capacitance due to local current flows persist and that such nanoscale changes can be induced by slow speed SMM scans at a constant DC bias.

Keywords: C-V measurement; scanning microwave microscopy; LaScO₃-SiO₂ capacitor

Contribution to proceedings
IEEE Semiconductor Conference Dresden, 27.-28.09.2011, Dresden, Deutschland
Lecture (Conference)
IEEE Semiconductor Conference Dresden, 27.-28.09.2011, Dresden, Deutschland

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