TEM investigation contributing to the comprehension of superconductivity in Ga-doped Si
TEM investigation contributing to the comprehension of superconductivity in Ga-doped Si
Mücklich, A.; Fiedler, J.; Heera, V.
TEM investigation contributing to the comprehension of superconductivity in Ga-doped Si
Keywords: Ga ion implantation; rapid thermal annealing; superconductivity
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 15982) publication
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Poster
MC2011, Microscopy Conference 2011, 28.08.-02.09.2011, Kiel, Deutschland
Permalink: https://www.hzdr.de/publications/Publ-15982
