Millisecond flash-lamp annealing of LaLuO3
Millisecond flash-lamp annealing of LaLuO3
Lehmann, J.; Shevchenko, N.; Mücklich, A.; von Borany, J.; Skorupa, W.; Schubert, J.; Lopes, J. M. J.; Mantl, S.
Metal-oxide-semiconductor capacitors containing the alternative high-k dielectric LaLuO3 were treated by flash lamp annealing (FLA). Capacitance–voltage (C–V) and current–voltage (J–V) characteristics reveal an increase in the capacitance for the flashed samples while the very low leakage current of the LaLuO3 is retained. Microstructural investigations confirm the thermal stability of the film even after FLA at 1200 °C, 20 ms.
Keywords: High-k dielectrics; Alternative high-k dielectrics; Higher-k dielectrics; Ternary rare earth oxides; Ternary high-k oxides; Rare-earth based gate oxides; Electrical properties
Involved research facilities
- Ion Beam Center DOI: 10.17815/jlsrf-3-159
Related publications
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 15993) publication
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Poster
17th Conference on "Insulating Films on Semiconductors", 21.-24.06.2011, Grenoble, France -
Microelectronic Engineering 88(2011), 1346-1348
DOI: 10.1016/j.mee.2011.03.126
ISSN: 0167-9317
Cited 6 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-15993
