Millisecond-annealing using flash lamps for improved performance of AZO layers

ZnO:Al films with a thickness of about 880nm were deposited by magnetron sputtering. The glass substrate was not heated neither before during nor after the deposition. Subsequently the deposited layers were treated by flash lamp annealing (FLA) at 1.3 ms. Using this method, the resistivity of the ZnO:Al films was decreased by a factor of two, down to 1.0 x 10-3 Ωcm. These results are in good agreement with results reported from rapid thermal processing or furnace annealing treatments. Despite the very short annealing time of only 1.3 ms not only the resistivity but also the transmittance in the UV and the blue range were considerably improved.